FDMS86300DC mosfet equivalent, n-channel mosfet.
* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
* High performa.
* Synchronous Rectifier for DC/DC Converters
* Telecom Secondary Side Rectification
* High End Server/Workst.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching p.
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